To provide a vapor phase epitaxy device and a method, which are capable of growing crystals that are more uniform in thickness, composition, and impurity concentration on a plurality of substrates simultaneously and efficiently.
The vapor phase epitaxy device is equipped with a lateral vapor phase epitaxy furnace 1. The lateral vapor phase epitaxy furnace 1 is equipped with a gas outlet 3 provided at its center, and hollow gas flow paths 8 which are provided around the gas outlet 3 so as to enable flows of gas 2 to flow over the surfaces of the substrates 6 arranged around the gas outlet 3. The gas flow path 8 is provided to each of the substrates arranged around the gas outlet 3 and kept constant in cross sectional area, at least, from the upper to lower end of a gas flow flowing over the substrate arranged around the gas outlet 3. Furthermore, the vapor phase epitaxy method is carried out using the above vapor phase epitaxy device.
KAKIMOTO NORIKO
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
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