PURPOSE: To produce Y and Bi-based superconducting thin films with good controllability while monitoring the crystal growth process in the device for producing an oxide superconducting thin film provided with plural ion beam sources and targets by arranging the shutter and substrate holder so that the sputtered particles from the target are received by a substrate at a specified incident angle.

CONSTITUTION: Plural ion sources 4 and targets 3, an electron gun 5, a screen 6, a substrate heating holder 2, a substrate 1, an active oxygen source 8 and an active oxygen inlet nozzle 7 are provided to a vacuum chamber 9. The target is arranged below and vertical to the ion source, and the substrate is arranged at a position, where the sputtered particles are received from the target at an incident angle of about 45-65°. Consequently, the reflection of the sputtering gas, influence of an oxygen negative ion and nonuniformity in the film composition are reduced, and the ion source arrangement is optimized in the multielement ion beam sputtering system. Gaseous oxygen is introduced directly below the substrate holder in a film growth chamber 16 through the quartz inlet pipe 7, passed through a microwave cavity and plasma-excited to form atomic active oxygen.