Title:
DIELECTRIC CERAMIC FOR TUNABLE DEVICES
Document Type and Number:
Japanese Patent JP2012069580
Kind Code:
A
Abstract:
To provide dielectric ceramic for tunable devices which has large variation of a relative dielectric constant for dc bias electric fields, small temperature dependence of the relative dielectric constant, and small dielectric loss in a wide frequency range, and enables low-temperature sintering.
The dielectric ceramic for tunable devices has a composition represented by the general formula: (1-x-y)NaNbO3-xSrTiO3-yCaTiO3, wherein 0≤x<1, 0≤y<1 and 0<x+y<1. Furthermore, x and y preferably satisfy 0≤x≤0.2, 0≤y≤0.2, and 0<x+y≤0.2, and are more preferably within the quadrangle whose vertices are (x, y)=(0, 0.15), (0.09, 0.06), (0.04, 0.06), (0, 0.10), or on edges of the quadrangle.
More Like This:
| JP2004214408 | VOLTAGE CONTROLLED VARIABLE CAPACITOR ELEMENT |
| JP3045419 | DIELECTRIC FILM CAPACITOR |
| JP6439856 | Variable capacitance element |
Inventors:
WADA KENSUKE
ITO CHIHIRO
SAITO YASUYOSHI
ITO CHIHIRO
SAITO YASUYOSHI
Application Number:
JP2010211011A
Publication Date:
April 05, 2012
Filing Date:
September 21, 2010
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
International Classes:
H01G7/06; C04B35/00; H01L41/18
Domestic Patent References:
| JP2009234888A | 2009-10-15 |
Attorney, Agent or Firm:
Fumio Hatakeyama
Kaoru Kobayashi
Kaoru Kobayashi
Previous Patent: INSULATED GATE TYPE BIPOLAR TRANSISTOR OF REVERSE CONDUCTING TYPE
Next Patent: SCHOTTKY JUNCTION ELEMENT USING OXIDE SEMICONDUCTOR
Next Patent: SCHOTTKY JUNCTION ELEMENT USING OXIDE SEMICONDUCTOR