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Patent Searching and Data


Title:
DIRECT CURRENT REACTIVE SPUTTERING APPARATUS
Document Type and Number:
Japanese Patent JP2012057216
Kind Code:
A
Abstract:

To prevent a reactant gas from flowing into a space defined between targets facing each other in a sputtering apparatus in which targets are arranged opposite to each other.

A direct current reactive sputtering apparatus includes: a sputter source 1 including the targets 5, 6 arranged opposite to each other; and a film deposition chamber 2 that is communicated with the sputter source 1 and stores a substrate W that is an object to be treated. In an opening 3 of the sputter source 1, a constricted part 20 that prevents the reactant gas of the film deposition chamber 2 from intruding into the sputter source 1, is formed. The constricted part 20 is defined by protrusions 22, 24 that are protruded from inner walls 31, 32 facing each other in the opening 3, respectively.


Inventors:
FUKADA SHINICHI
Application Number:
JP2010202022A
Publication Date:
March 22, 2012
Filing Date:
September 09, 2010
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
C23C14/00
Attorney, Agent or Firm:
Tetsuya Mori