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Title:
DONOR SUBSTRATE, AND MANUFACTURING METHOD OF DISPLAY
Document Type and Number:
Japanese Patent JP2010034022
Kind Code:
A
Abstract:

To provide a donor substrate capable of absorbing radiant rays of wide wavelengths efficiently, and to provide a manufacturing method of a display using the same.

Between a base body 41 of a donor substrate 40 and a light absorbing layer 42, there is provided a heat interference layer 46 having a plurality of layers of different refractive indexes. The heat interference layer 46 is composed of SiO2, SiN, SiON or Al2O3, for example, in order from the side of the base body 41, and is of a laminated structure of a first interference layer 46A of a thickness 50 nm or more and 200 nm or less and a second interference layer 46B composed of a-Si and of a thickness 15 nm or more and 80 nm or less. The refractive indexes and thickness of the first interference layer 46A and the second interference layer 46B are adjusted so that a reflection factor in a continuous wavelength region of 100 nm or more out of a light emitting band of the radiant rays R can become 0.1 or less.


Inventors:
HIGO TOMOYUKI
MATSUO KEISUKE
Application Number:
JP2008313105A
Publication Date:
February 12, 2010
Filing Date:
December 09, 2008
Export Citation:
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Assignee:
SONY CORP
International Classes:
H05B33/10; H01L51/50
Domestic Patent References:
JP2005101553A2005-04-14
JP2007141702A2007-06-07
JP2001242318A2001-09-07
JP2008066147A2008-03-21
JP2007173145A2007-07-05
Attorney, Agent or Firm:
Yoichiro Fujishima
Yasushi Santanzaki
Masao Hasebe
Takaaki Tanaami