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Title:
DRIVE CIRCUIT FOR MOS-FET
Document Type and Number:
Japanese Patent JPS6462015
Kind Code:
A
Abstract:

PURPOSE: To make most of the merit of save-power drive by switching the emitter follower circuit into the cut-off state in interlocking with the ON-OFF of a gate drive signal.

CONSTITUTION: An N-channel MOSFET1, a gate drive circuit 2, a PNP transistor(TR) 3 whose emitter and collector are connected respectively between the gate and source of the MOSFET1, and a base current supply resistor 4 connected between the collector and base of the TR 3 constitute an emitter follower circuit. Then a diode 5 connected between the base and emitter of the TR 3 switches the emitter follower circuit into the operating state or the cut-off state by using a gate drive signal from the base of the TR 3. Thus, the resistance between the gate and source of the MOSFET1 is kept to a low resistance in the OFF-state and the power consumption of the gate-drive circuit 2 is reduced. Thus, the merit of the power-saving drive is sufficiently utilized.


Inventors:
IWAI RYUICHIRO
Application Number:
JP21950687A
Publication Date:
March 08, 1989
Filing Date:
September 02, 1987
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H02M1/08; H03K17/56; H03K17/567; (IPC1-7): H02M1/08; H03K17/56
Domestic Patent References:
JPS62172813A1987-07-29
JPS54134547A1979-10-19
Attorney, Agent or Firm:
Akira Kobiji (2 outside)