Title:
DRY ETCHING EQUIPMENT AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2988122
Kind Code:
B2
Abstract:
PURPOSE: To switch from isotropic etching to anisotropic etching or vice versa easily by providing the equipment with a mechanism which switches from a first mechanism from which conditions for isotropic etching are obtained to a second mechanism from which conditions for anisotropic etching are obtained or vice versa.
CONSTITUTION: In a triode-type etching equipment, RF power is fed between an anode electrode 102 and a grid electrode 104 and CF2 is caused to flow in addition to Ar and O2 is also caused to flow to maintain the temperature of a cathode electrode 103 at a specified one and then an interlayer insulating film of a semiconductor device located on the cathode electrode 103 is isotropic- etched. Under such a condition, RF power is fed between the cathode electrode 103 and the grid electrode 104 for anisotropic etching of the interlayer insulating film. Etching is switched from isotropic to anisotropic or vice versa by changing the ratio of RF power feeding to the electrodes 102 and 103 by a controller 9a and a motor 110.
Inventors:
YAMAGATA YASUJI
SATO FUMIHIDE
SATO FUMIHIDE
Application Number:
JP12150992A
Publication Date:
December 06, 1999
Filing Date:
May 14, 1992
Export Citation:
Assignee:
NIPPON DENKI KK
International Classes:
C23F4/00; H01J37/32; H01L21/302; H01L21/3065; H01L21/311; H01L21/3213; H01L21/768; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP3211727A | ||||
| JP6050923A | ||||
| JP250424A | ||||
| JP5760073A | ||||
| JP456217A | ||||
| JP6113625A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)