To provide a dry etching method removing a solid material composed of plural constituting elements by one atomic layer or by one molecular layer and capable of controlling the order of the atomic layers or the order of the molecular layers, and to provide a device therefor.
Gaseous argon is fed from a gas flow rate control device 70 into an ECR plasma generating chamber 64 by a gas feed tube 75, and similarly, gaseous hydrogen is fed into a vacuum chamber 20 by a gas feed tube 76. Then, in an ECR plasma generating device 60, ECR plasma is generated and is introduced into the vacuum chamber 20. A silicon nitride film 45 is irradiated with the ECR plasma, and only nitrogen is removed. Then, the flow rates of the gaseous hydrogen and gaseous argon are changed, and the silicon nitride film 45 is irradiated similarly with generated ECR plasma, and the removal of silicon only is executed.
MUROTA JUNICHI