Title:
METHOD FOR ANISOTROPICALLY ETCHING COPPER
Document Type and Number:
Japanese Patent JP2001003186
Kind Code:
A
Abstract:
To provide a method for anisotropically etching a copper thin film for nanofabrication.
Copper 12 is anisotropically oxidized by plasma oxidation or ion implantation. The oxidized copper 16 is exposed to a gaseous atmosphere contg. a copper complexing ligand selected from the group consisting of β- diketone, β-ketoimine and their decomposition products to form a copper-ligand complex, and the copper-ligand complex is sublimated from a substrate 10 to etch copper from the substrate 10. One of the appropriate ligands is exemplified by 1,1,1,5,5,5-hexafluoro-2,5-pentanedione (H+hfac).
Inventors:
GEORGE MARK A
BOHLING DAVID ARTHUR
LANGAN JOHN GILES
BECK SCOTT E
BOHLING DAVID ARTHUR
LANGAN JOHN GILES
BECK SCOTT E
Application Number:
JP2000142305A
Publication Date:
January 09, 2001
Filing Date:
May 10, 2000
Export Citation:
Assignee:
AIR PROD & CHEM
International Classes:
C23F4/00; C23F4/04; H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): C23F4/00; C23F4/04; H01L21/3065
Domestic Patent References:
| JPH0864606A | 1996-03-08 | |||
| JPH01215986A | 1989-08-29 | |||
| JPH05136107A | 1993-06-01 | |||
| JPH05308065A | 1993-11-19 | |||
| JPS63122156A | 1988-05-26 |
Attorney, Agent or Firm:
Takashi Ishida (4 others)