Title:
DRY ETCHING METHOD AND METHOD OF MANUFACTURING SILICON DIOXIDE SUBSTRATE
Document Type and Number:
Japanese Patent JP2016131173
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a dry etching method for reducing stepped etching residue failure and insufficient etching failure, and to provide a method of manufacturing a silicon dioxide (SiO) substrate.SOLUTION: In a dry etching method for etching a crystal substrate 110 while forming a sidewall protective film on the sidewall of the crystal substrate 110 as a silicon dioxide (SiO) substrate, by using an etching gas containing hexafluoroethane (CF) and helium (He), total flow rate (S1+S2) of the flow rate S1 of hexafluoroethane (CF) and the flow rate S2 of helium (He) is 45 sccm or more and 110 sccm or less, and the flow rate ratio (S2/S1) obtained by dividing the flow rate S2 of helium (He) by the flor rate S1 of hexafluoroethane (CF) is more than 0 and less than 1.0.SELECTED DRAWING: Figure 4
Inventors:
FUNEKAWA TAKEO
Application Number:
JP2015003931A
Publication Date:
July 21, 2016
Filing Date:
January 13, 2015
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L21/3065; H01L41/113; H01L41/332; H03H3/02
Attorney, Agent or Firm:
Kazuaki Watanabe
Keisuke Nishida
Satoshi Nakai
Keisuke Nishida
Satoshi Nakai