PURPOSE: To form a microscopic pattern without lowering the degree of resolution of light exposure by a method wherein an amorphous silicon film is deposited on an insulating film, a pattern is formed on the above-mentioned amorphous silicon film using a photoresist, and the insulating film is etched using said silicon film as a mask.
CONSTITUTION: A hydrogen-containing amorphous silicon film a-Si:H7 is deposited by conducting a glow discharge decomposing method, and a photoresist 8 is formed thereon by patterning. Then, the a-Si:H7 is formed by patterning by conducting a dry-etching method using the photoresist 8 as a mask. Lastly, a contact hole 9 is formed by conducting etching on the silicon oxide films p-SiO2 6 and p-SiO24 as deep as to the first wiring layer Ai 3 by performing a dryetching method using the mixed gas formed by adding 10% O2 into CHF3 and also by conducting a plasma CVD method using a-Si:H7 as a mask, and the a-Si:H7 is removed by dry-etching.
FUJITA TSUTOMU
KAKIUCHI TAKAO
FUJII TOYOKAZU
