PURPOSE: To improve the etch rate by making the opening rate in the central part of a third electrode between a first and a second electrodes higher as compared with the peripheral part, thereby enhancing the efficiency of leading out a plasma to an object to be etched.
CONSTITUTION: Into a vacuum vessel comprising a first electrode 4 on which an object 7 to be etched is mounted, a second electrode 5 placed so as to be opposed to the electrode 4, and a third electrode 6 having holes which is provided between the electrode 4 and the electrode 5, and a high-frequency power is applied to cause discharge. The object 7 to be etched is processed by a gas plasma generated. At that time, one whose opening rate of the electrode 6 is higher in the central part than in the peripheral part is used as the electrode 6. Hereupon, the leading out of the plasma is concentrated on the part to be etched. With this, the etch rate can be improved.
TANNO MASUO
TANAKA YASUO
| JPS60262424A | 1985-12-25 | |||
| JPS59126778A | 1984-07-21 |