Title:
ELECTRIC CIRCUIT WITH TEMPERATURE COMPENSATION
Document Type and Number:
Japanese Patent JPH01143416
Kind Code:
A
Abstract:
PURPOSE: To perform an operation over the temperature range of about -55 to about +125 deg.C by operating the terminating area of a first MESFET (enhancement type metal semiconductor field effect transistor) at a temperature higher than the operating temperature of the terminating area of a second MESFET. CONSTITUTION: A temperature compensation element is provided with the two MESFETs 30 and 32 of a depletion type GaAs. The MESFET 30 is operated in a linear area and the MESFET 32 is operated in a saturation area. The gate of the MESFET 30 is connected to the drain, the gate of the MESFET 32 is connected to the source and thus, the MESFET 30 is almost equal to a resistor provided with a positive temperature coefficient. The length of the gate of the MESFET 30 is 1 micron and the width is 10 microns. The length of the gate of the MESFET 32 is 1 micron and the width is 20 microns. Thus, the positive temperature coefficient of voltage drop in the temperature range of about +24 to +140 deg.C is about 0.57mV/ deg.C.
Inventors:
ANDOREI PEKUZARUSUKII
Application Number:
JP28567187A
Publication Date:
June 06, 1989
Filing Date:
November 13, 1987
Export Citation:
Assignee:
HONEYWELL INC
International Classes:
H03K17/14; H03K17/687; H03K19/003; H03K19/094; H03K19/0952; H03K19/0956; (IPC1-7): H03K17/14; H03K17/687; H03K19/003; H03K19/094
Attorney, Agent or Firm:
Masaki Yamakawa (3 outside)