PURPOSE: To improve the matching with the external circuit impedance by installing the diode electrode forming the diode approximate to the gate electrode on the same surface as the semiconductor layer forming FET and then combining these electrodes with the lead wire to form an input impedance matching circuit.
CONSTITUTION: N-type active layer 2 is epitaxial-grown on the region at one side of semi-insulating substrate 1, and source electrode 3 and drain electrode 4 of Au, Ge and Ni are formed there. Then layer 2 is given the mesa etching to expose substrate 1. Al Schottky gate electrode 5 is formed between electrode 3 and 4, and the edge part of 5 is extended onto substrate 1 to form the FET part I. At the same time, N-type layer 2 is epitaxial-grown on the other side of substrate 1 as well with Al Schottky electrode 16 attached. Surrounding electrode 16, Au-Ge-Ni earth electrode 15 is formed with layer 2 mesa-etched to form planar-type Schottky diode part II. After this, electrode 5 and 16 are connected via lead wire 9 to form a matching circuit
MITSUI YASUROU
MITSUI SHIGERU
