To enhance light resistance while allowing the reduction in manufacturing costs, in an electro-optical device.

The electro-optical device is equipped with, on a substrate (10): a TFT (30) provided correspondingly to a pixel electrode (9); an upper light shielding film (6c) for covering a channel region of the TFT from above; an interlayer insulating film with a multilayer structure, which is provided between the upper shielding film and the TFT and in which a contact hole (81c) for electrically interconnecting the upper light shielding film and the TFT is formed and a recess (501h) is formed above the TFT; and at least one piece of stopper films (500) which is provided between a plurality of films constituting the multilayer structure and is formed at a bottom of the recess or the circumference of the bottom. The upper light shielding film includes a wall section (6w) formed in the recess.