ELECTRODE STRUCTURE, METHOD FOR FORMING THE SAME, AND METHOD FOR CONTACT-FORMING THE SAME

Japanese Patent JPH11233725

A

To prevent an electrode from being broken during overetching when the electrode is contact-formed, by providing the electrode with a first conductive film made of a hardly etched material and a second conductive film made of a slightly etched material when they are subjected to a chemical dry etching.

An oxide is deposited on a silicon substrate 1 to form an oxide film 2. A titanium film 3 deposited on the oxide film 2 functions as a barrier material for a platinum film 4. The platinum film 4 is formed by sputtering and is used as a bottom electrode of a capacitor of a memory cell. The platinum film 4 and the titanium film 3 are structured. A barium titanate strontium film 5 is deposited with a platinum film 6 as the first conductive film of an electrode structure 10. A titanium nitride film 7 is formed on the platinum film 6 as the second conductive film of the electrode structure 10. This can prevent the electrode structure 10 from being broken when a contact hole is etched.

WEINRICH VOLKER
ENGELHARDT MANFRED DR
PAMLER WERNER
WENDT HERMANN

JP20440998A

August 27, 1999

July 03, 1998

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SIEMENS AG

H01L21/28; H01L21/02; H01L21/3205; H01L21/3213; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/10; H01L27/105; H01L27/108; (IPC1-7): H01L27/04; H01L21/822; H01L21/28; H01L27/10; H01L27/108; H01L21/8242

Iwao Yamaguchi

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