Title:
ELECTRONIC ELEMENT AND ITS MANUFACTURE, AND DIELECTRIC CAPACITOR AND ITS MANUFACTURE, AND OPTICAL ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH11233723
Kind Code:
A
Abstract:
To enable a device to sufficiently exhibit the property of a functional oxide film or a dielectric film.
The manufacture of a dielectric capacitor is as follows: a Ta-O-N film 4, 5-10 nm in thickness is made by performing ozone annealing at a temperature of 300-350°C after growing a TaN film 3 as a lower electrode so as to oxidize the surface. A Ta2O5 film 5 is grown on this Ta-O-N film 4, and further zone annealing is performed at a temperature of 300-500°C so as to improve the insulation property of the Ta2O5 film 5, and then an Al electrode 6 is made as an upper electrode, thus a MIM type of dielectric capacitor is made.
Inventors:
BUN NORIKI
Application Number:
JP3101298A
Publication Date:
August 27, 1999
Filing Date:
February 13, 1998
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L39/24; H01G4/33; H01L21/316; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/105; H01L27/108; H01L37/02; H01L39/02; H01L41/09; (IPC1-7): H01L27/04; H01L21/822; H01G4/33; H01L21/316; H01L27/108; H01L21/8242; H01L37/02; H01L39/02; H01L39/24; H01L41/09
Attorney, Agent or Firm:
Masatomo Sugiura