To obtain an electrostatic chuck that can increase the plasma- resistance property of an electrostatic chuck base, without damaging attraction force by the Johnson-Rahbek effect, can suppress generation of impurity elements that become the contamination source for a body to be attracted and generation leakage current accompanying reduction of resistivity, and can be used over a wide temperature range.
A plasma-resistant protection film 2, consisting of a low-impurity dielectric, is provided onto the surface of an electrostatic chuck base 3 made of one of ceramics, silicone resin, and polyimide. Furthermore, more specifically, on the surface of a ceramics sintering body 3 having resistivity of 1010-1015 Ωcm, an aluminum nitride film 2 formed by the gaseous phase synthesis method is provided. Also, the aluminum nitride film 2 preferably contains titanium with a ratio of 10 atom.% or less with respect to aluminum element.
KANEKO KAYU
MORIKAWA SHIGERU
FUJII TAKAMITSU
KAJIMURA ATSUKO
KANSAI RES INST
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