Title:
ELEMENT SEPARATION FILM OF SEMICONDUCTOR DEVICE AND ITS FORMATION
Document Type and Number:
Japanese Patent JPH08330297
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an element separation film utilizing implantation of oxygen ions and its forming method. SOLUTION: An element separation film is provided with a trench 24 formed in a field region of a semiconductor substrate 100, a field oxide film 26 formed on a bottom of the trench 24, and an insulation layer 28 formed so as to embed the trench 24 on an upper portion of the field oxide film 26. The forming method comprises the steps of implanting oxygen ions in the field region of the semiconductor substrate 100, and forming the element separation film by oxidizing the region where the oxygen ions are implanted. Accordingly, it is possible to improve the characteristics of element separation, suppress bird's beaks or dishing phenomena, and reduce a process period.
Inventors:
KIN KIYOUSHIYOU
Application Number:
JP24259495A
Publication Date:
December 13, 1996
Filing Date:
September 21, 1995
Export Citation:
Assignee:
SAMSUNG ELECTRONIC
International Classes:
H01L21/265; H01L21/76; H01L21/762; H01L21/316; (IPC1-7): H01L21/316; H01L21/265; H01L21/76
Attorney, Agent or Firm:
Hattori Masaki
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