To provide an embedded type nitride semiconductor laser device for improving its threshold current characteristics, by preventing generation of cracks resulting from a current constriction layer, thereby reducing reactive current that does not contribute to light emission.

This embedded type nitride semiconductor laser device includes at least an n-type cladding layer 103, an active layer 105, and an n-type current constriction layer 109, which are laminated on a GaN substrate 101. A current-carrying part 115 is formed by removing part of the n-type current constriction layer, and a p-type cladding layer 111 is formed above the n-type current constriction layer and the current-carrying part. The n-type current constriction layer is formed of nitride semiconductor containing at least Al, and its impurity concentration is higher than 1×1019cm-3. Thus, the tensile strain of the current constriction layer is remarkably reduced.

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