To provide a method for manufacturing III-V semiconductor optical device for reducing variation of the shape of microstructure.
The method for manufacturing a III-V semiconductor optical device 40 includes: a step S3-3 for facing a mold 30 to a semiconductor layer 15; a step S3-5, S3-7 for measuring a level distribution of a concavo-convex pattern 30P of the mold 30 and a part 15AS of a surface 15S of the semiconductor layer 15; a step S3-9 for forming a resin layer 17; and a step S3-11 for determining the relative position relation between the mold 30 and the III-V semiconductor substrate 3 in which variation of thickness of the remaining film R17A, R17B, R17C, R17D, R17E of the resin layer 17 is less than a predetermined amount of the variation by calculating the variation of thickness when the concavo-convex pattern 30P of the mold 30 is virtually pressed to the resin layer 17.
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YOSHINAGA HIROYUKI
Shiro Terasaki
Yoshiki Kuroki
Ichira Kondo
Hidehiko Suzuki