PURPOSE: To cause a switching speed to be high-speed by connecting the collector of a transistor in a signal basic cell to compose plural current switches, respectively, in the signal basic cell.
CONSTITUTION: In a basic cell 10B, the respective collectors of transistors Q1B and Q2B are connected by a first layer wiring 22. To respective terminals 11b and 12b, a reference voltage VBB is impressed, and an AND X.Y of signals X and Y inputted to the terminals 11a and 12a, respectively, is outputted through a transistor Q3B of an emitter follower from a terminal 13b. In such a way, since a collector connecting point is executed by the first layer wiring 22 in the basic cell 10B and the wiring 22 is sufficient by the degree of approximately 1/2 in comparison with a conventional case, the collector wiring capacities of the transistors Q1B and Q2B is are made small, and the switching speed can be made high-speed.
SUGIYAMA EIJI
ANDO NAOYUKI
TANDO YASUHIKO
SETO CHIKAHIRO
| JPS61248619A | 1986-11-05 | |||
| JPS48100066A | 1973-12-18 | |||
| JPS5378160A | 1978-07-11 | |||
| JPS61121612A | 1986-06-09 |