Title:
EPITAXIAL GROWTH METHOD OF COMPOUND SEMICONDUCTOR AND INP SUBSTRATE FOR IT
Document Type and Number:
Japanese Patent JP3129112
Kind Code:
B2
Abstract:
PURPOSE: To restrain a hillock from being generated by a method wherein, when a compound-semiconductor thin film is to be epitaxially grown on an InP substrate, a substrate in which the defect density of the InP substrate and an angle of inclination from a criterion plane (100) satisfy a specific expression is used.
CONSTITUTION: When a compound-semiconductor thin film is to be epitaxially grown on an InP substrate, a substrate in which the defect density D of the InP substrate and an angle of inclination from a criterion plane (100) satisfy Θ≥1.26×10-3D1/2 is used. At this time, D is expressed by a defect density EPD (cm-2), and Θ is expressed by an angle (°). However, the defect density of the substrate is a mean value. Since a defect (a dislocation) is irregular on the face of the substrate, it may be meaningless even when it is expressed by a high significant figure. When a significant figure is small, a first one digit for a proportionality constant is taken, and the angle of inclination is given by Θ≥1.26×10-3D1/2. Thereby, it is possible to restrain a hillock from being generated.
Inventors:
Kazuhiko Oida
Ryuji Nakai
Ryuji Nakai
Application Number:
JP24068094A
Publication Date:
January 29, 2001
Filing Date:
September 08, 1994
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B23/02; C30B25/02; C30B29/40; C30B25/18; H01L21/205; (IPC1-7): H01L21/205; C30B25/18; C30B29/40
Domestic Patent References:
| JP2239188A | ||||
| JP60260500A | ||||
| JP7193007A | ||||
| JP2244771A | ||||
| JP6227898A | ||||
| JP6453409A | ||||
| JP5301795A | ||||
| JP196982A | ||||
| JP697072A | ||||
| JP684796A | ||||
| JP6415914A | ||||
| JP61116823A |
Attorney, Agent or Firm:
Shigeki Kawase