Title:
EPITAXIAL WAFER MANUFACTURING METHOD AND APPARATUS
Document Type and Number:
Japanese Patent JP3727147
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an epitaxial wafer manufacturing method and apparatus which markedly reduces heavy metal contamination generated within a reaction furnace during the periodical maintenance and check process and is free from the effects of heavy metal contamination, even in the epitaxial growth process.
SOLUTION: A purge gas injection apparatus for introducing the purge gas into the inside of a reaction furnace is provided. The purge gas injection apparatus is communicated with an interval 43 and interval. 23 via injection pipes 11, 12. At the internal circumference surface of a base plate 3, the purge gas introducing grooves 32, 34 are formed. A communicating hole 41 for communication between the internal side and interval 43 is formed to an upper liner 4. During epitaxial growth, hydrogen gas is caused to flow into the intervals 43, 23, and during the work, nitrogen gas is caused to flow into the intervals 43, 23 as a purge gas.
Inventors:
Hiraishi Yoshinobu
Yuichi Nasu
Yuichi Nasu
Application Number:
JP21728297A
Publication Date:
December 14, 2005
Filing Date:
August 12, 1997
Export Citation:
Assignee:
Komatsu Electronic Metal Co., Ltd.
International Classes:
C30B25/14; C30B29/06; H01L21/20; H01L21/205; (IPC1-7): H01L21/205; C30B25/14; C30B29/06; H01L21/20
Domestic Patent References:
| JP8055842A | ||||
| JP8070035A |
Attorney, Agent or Firm:
Kinoshita Minoru
Kanji Nakayama
Tsuyoshi Ishizaki
Akira Eto
Kanji Nakayama
Tsuyoshi Ishizaki
Akira Eto