Title:
EPITAXIALLY GROWN LEAD GERMANATE FILM AND DEPOSITING METHOD THEREOF
Document Type and Number:
Japanese Patent JP3683158
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To suppress a second phase from growing by controlling the atmosphere in forming PGO films prospective for forming memory cells of 1T type FeRAMs by MOCVD.
SOLUTION: The method of epitaxially growing a lead germanate (PGO) film on a semiconductor wafer comprises step 102 of mixing Pb(thd)2 with Ge(ETO)4 to form a PGO mixture having a mol ratio of about 4.5:3-5.5:3, step 104 of dissolving the mixture in step 102 with solvents of tetrahydrofuran, isopropanol and tetraglyme to produce a precursor soln., step 106 of producing a precursor gas from the soln. produced in step 104, step 108 of decomposing the precursor gas produced in step 106 on the wafer, and step 110 of epitaxially growing a PGO film contg. a first phase of Pb5Ge3O17, thereby forming a homogeneous film having ferroelectric characteristics.
Inventors:
Ting Kai Lee
Fenyang Zank
Yoshino
Shen Ten Suu
Fenyang Zank
Yoshino
Shen Ten Suu
Application Number:
JP2000131693A
Publication Date:
August 17, 2005
Filing Date:
April 28, 2000
Export Citation:
Assignee:
Sharp Corporation
International Classes:
C30B29/22; C23C16/40; H01B3/00; H01B3/12; H01L21/205; H01L21/26; H01L21/31; H01L21/316; H01L21/8246; H01L27/10; H01L27/105; (IPC1-7): H01L21/316; C23C16/40; C30B29/22; H01B3/00; H01B3/12; H01L21/26; H01L21/31; H01L27/10
Domestic Patent References:
| JP2000315770A | ||||
| JP2001007104A | ||||
| JP2000357691A | ||||
| JP2000353790A |
Other References:
Tingkai Li et.al.,The ferroelectric properties of c-axis oriented Pb5Ge3O11 thin films prepared by metalorganic chemi ,Appl. Phys. Lett.,米国,American Institute of Physics,1999年 1月11日,vol.74,no.2,p.296-298
Attorney, Agent or Firm:
Hidesaku Yamamoto
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