Title:
エッチング用組成物およびこれを用いた半導体素子の製造方法
Document Type and Number:
Japanese Patent JP7078616
Kind Code:
B2
Abstract:
The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.
Inventors:
Park, Choi Wan
Im, john-hun
Lee Jin-Wook
Im, john-hun
Lee Jin-Wook
Application Number:
JP2019522278A
Publication Date:
May 31, 2022
Filing Date:
December 26, 2017
Export Citation:
Assignee:
Soul Brain Cio., LTD.
International Classes:
H01L21/308; H01L21/306; H01L21/336; H01L21/768; H01L21/8239; H01L23/532; H01L27/105; H01L27/11556; H01L29/788; H01L29/792
Domestic Patent References:
| JP2016029717A | ||||
| JP2014099480A | ||||
| JP2000058500A | ||||
| JP2012222330A | ||||
| JP2013128109A |
Foreign References:
| KR1020110037766A | ||||
| US20130092872 |
Attorney, Agent or Firm:
Yamashita