Title:
ETCHING COMPOSITION FOR THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY
Document Type and Number:
Japanese Patent JP2009218601
Kind Code:
A
Abstract:
To provide a gate interconnection material thin etching composition for forming an excellent profile, for a thin-film transistor liquid crystal display.
The etching composition has the effect on etching an amorphous ITO forming pixel electrodes of the thin-film transistor liquid crystal display and an Mo/Al-Nd double film being a gate interconnection material forming a TFT by a single process with the use of the same composition without an undercut phenomenon of an Al-Nd being a lower film to obtain an excellent taper, and at the same time, has also the effect on forming an excellent profile of an Mo single film being a source/drain interconnection material.
Inventors:
KIM JONG IL
LEE KYOUNG MOOK
SONG KYE CHAN
CHO SAMUYON
SHIN HYUNCHOL
KIM NAMUSO
LEE KI BEOM
LEE KYOUNG MOOK
SONG KYE CHAN
CHO SAMUYON
SHIN HYUNCHOL
KIM NAMUSO
LEE KI BEOM
Application Number:
JP2009068138A
Publication Date:
September 24, 2009
Filing Date:
March 19, 2009
Export Citation:
Assignee:
LG DISPLAY CO LTD
DONGJIN SEMICHEM CO LTD
DONGJIN SEMICHEM CO LTD
International Classes:
H01L21/308; C23F1/26; C23F1/44; H01L21/28; H01L21/3213
Domestic Patent References:
| JP2006339635A | 2006-12-14 | |||
| JP2002208704A | 2002-07-26 | |||
| JP2002009061A | 2002-01-11 |
Attorney, Agent or Firm:
Masao Okabe
Nobuaki Kato
Okabe
Shinichi Usui
Takao Ochi
Asahi Shinmitsu
Nobuaki Kato
Okabe
Shinichi Usui
Takao Ochi
Asahi Shinmitsu