Title:
RESISTIVE MEMORY DEVICE AND METHOD OF FORMING THE SAME
Document Type and Number:
Japanese Patent JP2009218598
Kind Code:
A
Abstract:
To provide a phase change memory device that can be highly integrated and a method of forming the same.
Provided is a resistive memory device that can be highly integrated and the method of forming the same. An insulating layer 150 enclosing a resistive memory element 130 and an insulating layer 160 enclosing a conductive line 180 connected to the resistive memory element have different stresses, hardness, porosity degrees, dielectric constants or heat conductivities.
Inventors:
RYOO KYUNG-CHANG
JEONG HONG-SIK
JEONG GI-TAE
KIM HYUNG-JUN
LIM DONG-WON
JEONG HONG-SIK
JEONG GI-TAE
KIM HYUNG-JUN
LIM DONG-WON
Application Number:
JP2009056473A
Publication Date:
September 24, 2009
Filing Date:
March 10, 2009
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L27/105; H01L21/768; H01L23/522; H01L45/00
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Previous Patent: 双極性ＬＥＤ駆動回路
Next Patent: ETCHING COMPOSITION FOR THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY
Next Patent: ETCHING COMPOSITION FOR THIN-FILM TRANSISTOR LIQUID CRYSTAL DISPLAY