Title:
ETCHING METHOD, ETCHING EQUIPMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING ORIGINAL PLATE
Document Type and Number:
Japanese Patent JP2023141917
Kind Code:
A
Abstract:
To provide an etching method capable of forming suitable concavo-convex patterns on substrates, etching equipment, a method for manufacturing a semiconductor device, and a method for manufacturing an original plate.SOLUTION: One example of an etching method includes a first step of forming a surface modification layer containing halogens on a substrate by supplying a gas containing halogens to the substrate or by holding the substrate in a gas atmosphere containing halogens, and a second step of removing the surface modification layer at a predetermined site and the substrate under the surface modification layer at the predetermined site by supplying ions derived from solid raw materials to the predetermined site in the surface modification layer.SELECTED DRAWING: Figure 1
Inventors:
SAKURAI NORIKO
MOTOKAWA KOJI
SAKURAI HIDEAKI
MOTOKAWA KOJI
SAKURAI HIDEAKI
Application Number:
JP2022048499A
Publication Date:
October 05, 2023
Filing Date:
March 24, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Toru Kamada
Yoshiyuki Inaba
Kenro Murai
Yoshiyuki Inaba
Kenro Murai
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