Title:
エッチング方法およびエッチング装置
Document Type and Number:
Japanese Patent JP7133975
Kind Code:
B2
Abstract:
An etching method includes: adsorbing an adsorbate based on a processing gas containing BCl3 gas onto a target object, which serves as a to-be-etched object, by: supplying H2 gas and the processing gas to a process space in which the target object is disposed; and applying power of a predetermined frequency to the process space, while supplying the H2 gas is stopped, to generate plasma in the process space; and etching the target object by generating plasma of a rare gas in the process space to activate the adsorbate.
Inventors:
Masato Sakamoto
Tadahiro Ishizaka
Takeshi Itaya
Tadahiro Ishizaka
Takeshi Itaya
Application Number:
JP2018092321A
Publication Date:
September 09, 2022
Filing Date:
May 11, 2018
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/3065
Domestic Patent References:
| JP2017063186A | ||||
| JP2015191922A | ||||
| JP2017228791A | ||||
| JP2016201476A | ||||
| JP2016208027A | ||||
| JP2014522104A |
Attorney, Agent or Firm:
Sakai International Patent Office