Title:
ETHER COMPOUND, POLYMER COMPOUND, RESIST MATERIAL AND PATTERN-FORMING METHOD
Document Type and Number:
Japanese Patent JP3876977
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a resist material which comprises as a base resin a polymer compound and is sensitive to high energy rays, excellent in sensitivity, resolution and etching resistance and therefore suitable for use in microfabrication by electron rays or far ultraviolet rays.
SOLUTION: An ether compound represented by formula (I) (wherein R1 is hydrogen atom or a 1-6C linear, branched or cyclic alkyl group; R2 is a 1-6C linear, branched or cyclic alkyl group; R3 is hydrogen atom or a 1-15C aryl or alkoxycarbonyl group, and hydrogen atoms on the constituent carbon may be partially or totally replaced with a halogen atom; (k) is an integer of 0 or 1; (m) is an integer of 0-3; and (n) is an integer of 3-6) is provided. The resist material has low absorption particularly at an exposed wavelength of an ArF excimer laser or a KrF excimer laser and therefore can easily form a fine pattern perpendicular to a substrate.
Inventors:
Seiichiro Tachibana
Mutsuko Nakajima
Tsunehiro Nishi
Mutsuko Nakajima
Tsunehiro Nishi
Application Number:
JP2002005779A
Publication Date:
February 07, 2007
Filing Date:
January 15, 2002
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
C08F32/04; G03F7/039; C07C43/178; C07C69/16; C08G61/08; H01L21/027; (IPC1-7): C08F32/04; C07C43/178; C07C69/16; C08G61/08; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Takashi Kojima
Yuko Nishikawa
Yuko Nishikawa