PURPOSE: To provide an evaluating method and device of individual recombration current component and intrinsic current component rapidly, easily with high precision in individual element in order to evaluate the DC characteristics in bipolar transistor.

CONSTITUTION: The dependence on the voltage between the base and the emitter of the collector current IC and the base current IB is measured to compute the dependence of the DC current amplification factor hFE on the collector current density Tc. Next, based on the computed value, the relation between the derivative of-1/hFE with respect to Jc and Jc is displayed in the log-loy diagram to determine the value of α from the gradient (α-2) obtained by linear approximation of a specific Jc region. Next, the relation between 1/hFE and the (α-1)th power of Jc is displayed using the value of α than determined. Then, the intrnsic current amplification factor may be computed from the intercept on Y axis i.e., the first term not depending upon Jc while the coefficient relating to the magnitude of the recombination may be computed from the gradient of the line, i.e., the second term depending upon Jc by linear apporoximation of the Jc region.