Title:
EVALUATION METHOD, EVALUATION DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2015122408
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To more easily measure defective level of a semiconductor or an insulating body than before, without processing a sample to an element structure.SOLUTION: In an evaluation method, firstly, a semiconductor or an insulating body on a surface of a sample 12 is irradiated with X ray 16 so that temporal change in energy distribution of a photoelectron 20 that is released from the semiconductor or the insulating body is detected. Then, in addition to the X ray 16, the surface of the sample 12 is irradiated with a single color light 24 of the energy smaller than a band gap of the semiconductor or the insulating body, and a temporal change in the energy distribution of the photoelectron that is caused by that is detected. Based on the detection result, an internal defect of the semiconductor or the insulating body is evaluated.
Inventors:
IMAZAWA TAKASHI
KIYOI AKIRA
KIYOI AKIRA
Application Number:
JP2013265402A
Publication Date:
July 02, 2015
Filing Date:
December 24, 2013
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/66; G01N23/227
Domestic Patent References:
| JP2002286640A | 2002-10-03 | |||
| JPH09162253A | 1997-06-20 | |||
| JPH07183343A | 1995-07-21 | |||
| JPH03132052A | 1991-06-05 | |||
| JPH0685021A | 1994-03-25 |
Foreign References:
| WO2011122020A1 | 2011-10-06 |
Attorney, Agent or Firm:
Fukami patent office