PURPOSE: To evaluate the moisture resistance sensitively in a short time, by providing a plurality of holes on a gold wire bonding electrode formed on a semiconductor element of a resin molded semiconductor device to detect changes in the capacity of an electrode section.

CONSTITUTION: A wire 5 mainly composed of aluminum and a bonding electrode 6 are provided on the surface of a semiconductor element. A part of the electrode 6 is removed and a plurality of holes 11 are formed. Thereafter, a protective film 7 is applied and fastened to a lead frame and then, after bonded with a gold wire 2, the work is molded entirely by a resin. In a device thus arranged, when the contact property is poor on the interface between the gold wire 2 and the resin, water infiltrates by a moisture resistance test and begins to form a water film 10 on the electrode 6 in the perimeter of the gold wire 2. To electrically detect this condition, the capacity of an oxide film under the electrode 6 is measured with time. As the water film 10 is formed and begins to spread over the holes 11, the area of the electrode 6 increases effectively, causing an increase in the capacity. Thus, the moisture resistance can be evaluated sensitively in a short time.