To transfer a pattern with high dimensional accuracy by forming a first region having a first multilayered film and a second region having a first multilayered film, intermediate layer and second multilayered film on a reflection mask and controlling the reflectivity in the second region to be smaller than the reflectivity of the first region.
A first region having a first multilayered film 2, and a second region having a first multilayered film 2, intermediate layer 3 and second multilayered film 4 are formed in the mask, and the reflectivity of the second region is controlled to be smaller that the reflectivity in the first region. The periodical lengths of the first and second multilayered films 2, 4 are determined so that the phases of the reflected light on the interfaces coincide with each other under conditions of specified wavelength and incident angle. Therefore, high reflectance is obtd. in the first region. In the second region, thickness of the intermediate layer is determined to odd number times as 1/2 periodical length of the multilayered film. In this method, phases of the reflected light on the first multilayered film 2 and on the second multilayered film 4 differ by 180 from each other. Therefore, reflectivity compensates with each other to give low reflectivity in the second region.
TERASAWA TSUNEO
OIIZUMI HIROAKI
YAMANASHI HIROMASA
SEYA HIDEKAZU
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