EXTERNAL PHOTOELECTRIC EFFECT TYPE SOLID-STATE IMAGE SENSING DEVICE

Japanese Patent JP3294311

B2

PURPOSE: To improve the detectivity of the title device and to contrive to enlarge the dynamic range of the device by a method wherein grid electrodes, which keep an electrical insulation from pixel electrodes and to which a potential independent of that to the pixel electrodes can be applied, are arranged on the incident side of incident rays, which are incided through each pixel electrode consisting of pixels.
CONSTITUTION: N-type diffused layers 2 are diffusedly formed in the surface of a P-type semiconductor substrate 1. A transparent protective insulating film 3, through which a window opening is made in parts of the layers 2, is formed on the surfaces of the layers 2 and moreover, pixel electrodes 4, which are isolated from each other in such a way as to cover window opening parts 3a of the film 3 and consists of a metal, such as aluminium, or a conductive material, such as a semiconductor, are formed in such a way as to come into contact ohmically with the layers 2. Moreover, grid electrodes 6 are provided in such a way as to lie across the adjacent electrode 4 and in such a way that a potential independent of those to the electrodes 4 and the like can be applied to the electrodes 6. Incident rays 7, such as charged particles or X-rays, are emitted in such a way as to be incident on the electrodes 4 from the upper parts of the electrodes 6.

Kazuya Matsumoto

JP9231992A

June 24, 2002

March 19, 1992

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Olympus Optical Co., Ltd.

G01J1/44; G01T1/20; G01T1/29; H01L27/14; H01L31/09; H04N5/32; H04N5/335; H04N5/355; H04N5/369; H04N5/372; H04N5/374; H04N5/3745; (IPC1-7): H01L27/14; G01T1/20; G01T1/29; H01L31/09; H04N5/32

JP6174375A
JP6484176A
JP3261029A
JP3163872A
JP231184A
JP595129A
JP5110051A

Kenji Mogami

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