Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5772350
Kind Code:
A
Abstract:
PURPOSE:To securely hold the surface of a contact hole part of No.1 electrode layer by a method wherein surface treatment is carried out with a standard electrode potential and a fluid including metal ions selected from the viewpoint of free energy forming an oxide. CONSTITUTION:No.2 insulating layer 24 is formed after No.1 electrode layer 23 is deposited via No.1 insulating layer 22 on a semiconductor substrate 21. A contact hole 25 is etched away and its surface is treated, and then No.2 electrode layer 26 which contacts No.1 electrode layer 23 is built. At this moment, its surface treatment is carried out with a fluid that a single electrode potential is noble compared with a material of No.1 electrode layer 23 and yet metal ions of which free energy for forming an oxide is small are included. With this process, good reproducibility and high production yield is gained in connection of No.1 and No.2 electrode layers through the fine hole 25.
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Inventors:
HIGASHINAKAGAHA IWAO
Application Number:
JP14894080A
Publication Date:
May 06, 1982
Filing Date:
October 24, 1980
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L21/768; H01L21/60; (IPC1-7): H01L21/88