FABRICATION OF THIN FILM SEMICONDUCTOR DEVICE

Title:

FABRICATION OF THIN FILM SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP3735394

Kind Code:

B2

Abstract:

PURPOSE: To realize cost reduction of a laser annealing system and prolongation of the service life of a laser optical system while preventing dusts from adhering onto an insulating substrate by improving the atmosphere of laser annealing.
CONSTITUTION: The method for fabricating a thin film semiconductor device comprises a step for forming a thin semiconductor layer on an insulating substrate 2, and a step for integrating a thin film transistor using the thin semiconductor layer as an active layer. The thin semiconductor layer is heat treated by irradiating with laser light 3 before, after or during the fabrication step. The laser light 3 is irradiated in an atmosphere principally comprising an inert gas. For example, the insulating substrate 2 is thrown into a chamber 1-1 filled with an inert gas, nitrogen gas, under pressure higher than atmospheric pressure and then it is irradiated externally with laser light 3.

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Inventors:

Yasuhiro Kanaya

Application Number:

JP17420695A

Publication Date:

January 18, 2006

Filing Date:

June 16, 1995

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L21/20; H01L21/02; H01L21/268; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): H01L29/786; H01L21/336; H01L21/20; H01L21/268; H01L27/12

Domestic Patent References:

JP4286318A
JP3190121A
JP2248041A
JP566974U
JP6212947U

Attorney, Agent or Firm:

Harutoshi Suzuki

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