Title:
FERROELECTRIC MATERIAL CAPACITOR AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3971598
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve fatigue characteristic and imperfect imprinting by enhancing retention characteristic of a ferroelectric substance capacitor in a semiconductor device having the ferroelectric material capacitor.
SOLUTION: In the ferroelectric material capacitor wherein a PZT film is sandwiched between an upper and a lower electrodes, a film composed of tetragonal system PZT crystal having (001) orientation is used as the PZT film, and a layer composed of PZT crystal belonging to rhombohedron system is interposed on an interface between the upper and the lower electrodes.
Inventors:
Masaki Kurasawa
Kenji Maruyama
Kenji Maruyama
Application Number:
JP2001336576A
Publication Date:
September 05, 2007
Filing Date:
November 01, 2001
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/8246; H01L27/105; H01L21/02; H01L27/115; (IPC1-7): H01L27/105
Domestic Patent References:
| JP4171976A | ||||
| JP11330411A | ||||
| JP6089986A | ||||
| JP2001196652A | ||||
| JP10214945A | ||||
| JP5343697A | ||||
| JP2000208828A | ||||
| JP6021338A | ||||
| JP2000068464A | ||||
| JP6021337A |
Attorney, Agent or Firm:
Tadahiko Ito
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