Title:
FERROELECTRIC THIN FILM ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3214031
Kind Code:
B2
Abstract:
PURPOSE: To provide a method for manufacturing a ferroelectric thin film element having a structure in which a ferroelectric single crystal thin film is formed directly or indirectly on a substrate made of a material which cannot be heretofore used.
CONSTITUTION: A method for manufacturing a ferroelectric thin film element comprises the steps of forming ferroelectric single crystal thin films 2, 4 on a substrate by sputtering a ferroelectric material having different thermal expansion coefficient from that at a Curie point at the same temperature as those of substrate materials l, 3 on rectangular substrates 1, 3 having a width (a) and a length (b) wherein b/a≥5.
Inventors:
Toshio Ogawa
Application Number:
JP3524492A
Publication Date:
October 02, 2001
Filing Date:
February 21, 1992
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
G01J1/02; G01J5/02; G01J5/34; H01L37/02; H01L41/04; H01L41/18; H01L41/39; (IPC1-7): H01L41/04; G01J1/02; G01J5/02
Attorney, Agent or Firm:
宮▼崎▲ 主税