To protect oxidizable material which forms a gate from oxidation by a method wherein an anti-oxidant layer is formed on the gate of a transistor, and the gate with an anti-oxidant layer is exposed to an oxidizing atmosphere to form the source and drain of the transistor.
A gate insulating layer 11 and a gate metal coating layer 13 are laminated on a semiconductor substrate 10, where the coating layer 13 is composed of a doped silicon layer 14 and a tungsten silicide layer 16 deposited on the silicon layer 14. A silicon nitride layer 18 is deposited on the silicide layer 16, and a mask 30 with an opening 31 is provided on the silicon nitride layer 18 and the gate metal coating layer 13. Thereafter, a gate G of a transistor is formed in a region masked with the mask 30 by plasma etching, An anti-oxidant layer 32 is formed on the side walls of the gate G, the silicon nitride layer 18, and the doped silicon layer 14, and the gate G is exposed to an oxidizing atmosphere for the formation of a source region S and a drain region D.
WEYBRIGHT MARY
GAMBINO JEFFREY
THOMAS RUPP
IBM
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