MANUFACTURE OF MOS SEMICONDUCTOR

Japanese Patent JP2000196079

A

To provide a manufacturing method of a modified MOS semiconductor suitable for a high level integrated element.

This manufacturing method of a MOS semiconductor includes forming a gate 306 on a substrate 300. The extended source/drain 310a are made on a substrate in the vicinity of the gate. Ion implantation process for implanting heavily impurities which are low in diffusion coefficient within a substrate is carried out. A halogen region which is heavily doped is made under the extended source/drain 310a on the substrate 300. An oblique halogen implantation process is carried out to form a halogen implantation region under the gate, on the side of the extension source/drain region 310a on the substrate 300.

JP3061558	PROBLEM TO BE SOLVED: To form an insulating layer of a semiconductor device.
JPH08162648	MANUFACTURE OF SEMICONDUCTOR DEVICE
JPS59230240	ELECTRIC FIELD EMITTIVE LIQUID METAL ION SOURCE

CHIN SHINRAI
RIN KENTEI
SHU SHIBUN

JP37425998A

July 14, 2000

December 28, 1998

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UNITED MICROELECTRONICS CORP

H01L21/265; H01L21/336; H01L29/78; H01L29/10; (IPC1-7): H01L29/78; H01L21/265

Nishikyo Keiichiro (3 others)

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