To provide a field emission electron source having improved heat resistance while inhibiting a lowering of electron-emitting efficiency, and to provide a manufacturing method thereof.
The emission electron source 10 comprises a substrate 1, a lower electrode 2 formed on one surface of the substrate 1, an undoped polycrystalline silicon layer as a semiconductor layer 3 formed on the lower electrode 2, a high-field drift layer 6 consisting of an oxidized porous polycrystalline silicon layer formed on the polycrystalline silicon layer 3, and a surface electrode 7 formed on the surface of the high-field drift layer 6. Both the lower electrode 2 and the surface electrode 7 comprise a layer of a conductive carbonate substance. The high-field drift layer 6 forms a layer for passing electrons which come from the lower electrode 2 to the surface electrode 7, and are caused by an electric field when a voltage is applied between the lower electrode and the surface electrode 7, by setting the electrode 7 on higher electric potential side.
AIZAWA KOICHI
KOMODA TAKUYA
