To provide a film deposition apparatus and a film deposition method capable of depositing a coating film capable of demonstrating the performance as expected.
In the film deposition apparatus 10, materials ionized in a plasma area 64 in a vacuum tank 12, for example, nitrogen ions and boron ions are radiated on works 36, etc., in the plasma area 64. A cBN film formed of compounds of nitrogen and boron is deposited on surfaces of the works 36, etc. The pulse power of the frequency f of 10 [kHz] to 300 [kHz] is supplied to the works 36, etc. as the bias power Eb. Thus, in comparison with a case in which the high frequency power is supplied as the bias power Eb, the influence caused by the skin effect is suppressed, and degeneration of the works 36, etc. is prevented, accordingly. Thus, a cBN film of high hardness can be deposited as expected.
KOMATSU EIJI
KASHIWABARA AKITAKA
