To highly precisely control a film thickness by suppressing a pressure variation in a feed pipe of a film deposition material.
The film deposition apparatus comprises a film deposition source 21 for heating a film deposition material M to be sublimed or evaporated, and a film deposition chamber 11 with a substrate W for depositing the film deposition material therein. A discharge port 22 for discharging the film deposition material is formed in the film deposition chamber. A flow rate adjusting mechanism 24 for blocking, opening or variably adjusting the distribution of the film deposition material is provided on a feed pipe 23 to connect the film deposition source 21 to the discharge port 22. A volume variable mechanism 31 for adjusting the volume of a material distribution space V from a surface of the film deposition material M of the film deposition source 21 to a flow rate adjusting mechanism 24 is connected to the feed pipe 23. When the pressure in the material distribution space V is temporarily changed by the opening/closing operation of the flow rate adjusting mechanism 24, the pressure fluctuation is suppressed by adjusting the inner volume of the volume variable mechanism 31.
| JPH0916959 | MANUFACTURE OF MAGNETIC RECORDING MEDIUM |
| JP3644647 | ELECTRICALLY CONDUCTIVE OXIDE AND ELECTRODE USING THE SAME |
| JP2020176298 | VAPOR DEPOSITION APPARATUS |
UKIGAYA NOBUTAKA
KONUMA KYOEI
KURAMOCHI KIYOSHI
SUSHIGEN TOMOKAZU
NAKANE NAOHIRO
Next Patent: VACUUM VAPOR DEPOSITION APPARATUS