To provide a film deposition system and a film deposition method which allow the buring film-depositon of a material such as matal on fine holes or grooves, perform uniform wiring formation to the holes or grooves, and simultaneously, form wiring high in a film deposition rate, low in resistivity and having a long life by controlling the material in such a manner that the compositional ratio or orientation thereof controlled to the desired one without deteriorating its properties.
In a film deposition system having a means of feeding gas for exciting plasma into a vessel, an exhausting means for exhausting the gas and reducing the pressure in the vessel and a target electrode, which is arranged in the vessel and is sputtered by the plasma and performing film deposition, onto a substrate disposed oppositely to the target electrode, a structure having a magnet arranged in the vessel or outside the vessel and capable of forming the magnetic field parallel or almost parallel to the surface of the substrate on the surface of the substrate and an electrode capable of applying high frequency on the outer circumference of the substrate at the position the same or almost the same as that of the surface of the substrate is provided.
KAIHARA TATSU
NAKAGAWA MASATSUGU
NAKAJIMA KOICHI
TAMURA MOROHISA
OMI TADAHIRO
ULVAC CORP
| JPH03162583A | 1991-07-12 | |||
| JPH10251849A | 1998-09-22 |
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