Title:
FILM FORMATION AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JPH10194892
Kind Code:
A
Abstract:
To provide a method and a device for film formation with which a film having a good crystallinity is formed under a relatively low temp. and with good productivity.
The method and device for film formation is designed so that the electric power to supplied to a gaseous starting material for film formation, thereby this gas is made to form a plasma and the film is formed on an article 10 on which the film is to be formed under this plasma 13. The plasma 13 is formed in the vicinity of the peripheral part of the article 10, and simultaneously, the article 10 is faced to the plasma 13 through a collimator 7 disposed between the plasma 13 and the article 10.
Inventors:
KIRIMURA HIROYA
KISHIDA SHIGEAKI
OGATA KIYOSHI
MIKAMI TAKASHI
OKUMURA MASAHIKO
KISHIDA SHIGEAKI
OGATA KIYOSHI
MIKAMI TAKASHI
OKUMURA MASAHIKO
Application Number:
JP310097A
Publication Date:
July 28, 1998
Filing Date:
January 10, 1997
Export Citation:
Assignee:
NISSIN ELECTRIC CO LTD
International Classes:
G02F1/136; C23C16/24; C23C16/50; C30B29/06; G02F1/1368; H01L21/205; H01L21/336; H01L29/786; H01L31/04; (IPC1-7): C30B29/06; C23C16/24; C23C16/50; G02F1/136; H01L21/205; H01L21/336; H01L29/786; H01L31/04
Attorney, Agent or Firm:
Tanigawa Masao
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