To provide a film formation method in which useful Cu2O film (deposition film) or CuO film composed of a single crystal phase from Cu2O as a target can be selectively formed and further, on the formation of the Cu2O film, the film quality control of the Cu2O film can be easily performed.
Cu2O is used as a target, charging power for plasmatizing Ar and the total pressure of gas including Ar are set in such a manner that sputtering particles from the Cu2O are successively changeable into Cu2O, Cu4O3 and CuO in accordance with the increase in the flow rate ratio of O2, and then, the flow rate ratio of O2 is regulated under the charging power and the total pressure. In this way, either useful Cu2O film or CuO film composed of a single crystal phase can be adequately formed in a selective way. Further, on the formation of the Cu2O film, resistivity (carrier density) is regulated in a wide range by the regulation of the O2 flow rate ratio, and the change of the film quality properties of the Cu2O film can be easily performed.
SHIMA HISASHI
AKINAGA HIROYUKI
| JP2007013098A | 2007-01-18 |
| WO2002039508A1 | 2002-05-16 |
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