Title:
FILM FORMING APPARATUS
Document Type and Number:
Japanese Patent JP3200460
Kind Code:
B2
Abstract:
PURPOSE: To form a film in a state that generation of a spontaneous oxide film of a material to be treated such as a semiconductor wafer, etc., is suppressed as much as possible.
CONSTITUTION: A transfer chamber 3 in which a transfer robot 31 is installed is airtightly connected to a wafer attaching/detaching chamber 2 at a lower side of a vertical treatment furnace 1, and they are formed as a first load locking chamber. A second load locking chamber 4 is airtightly connected to the chamber 3, an infrared ray lamp 41 is disposed therein, and a cleaner 5 using hydrofluoric acid vapor is provided near the chamber 4 at the atmospheric side. These locking chambers are previously filled with inert gas atmosphere. First, untreated wafer is cleaned by the cleaner 5, a spontaneous oxide film on the surface is removed, it is immediately conveyed into the chamber 4, heat- treated therein, then transferred to the chamber 2 through the chamber 3, and then loaded in the furnace 1.
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Inventors:
Hiroshi Kondo
Mitsuhiro Tachibana
Mitsuhiro Tachibana
Application Number:
JP5700392A
Publication Date:
August 20, 2001
Filing Date:
February 07, 1992
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/205; H01L21/22; H01L21/31; H01L21/677; H01L21/68; (IPC1-7): H01L21/205; H01L21/22
Domestic Patent References:
| JP414222A | ||||
| JP5217919A |
Other References:
【文献】特許2759368(JP,B2)
Attorney, Agent or Firm:
Toshio Inoue
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