PURPOSE: To efficiently utilize high-density plasma and to increase the film forming and etching rates by fixing plural microwave guides so that the angle between the axial center line and a target is made constant.
CONSTITUTION: The microwave generated by the microwave generator of the film forming device is transmitted through the microwave guides 8 and 8', and introduced into a vacuum chamber 1 from a microwave inlet window 7. The mounting part for the vacuum chamber 1 and microwave guides 8 and 8' is made expandable and bendable. The angle θ between the axial center line of the microwave guides 8 and 8' and the film forming target 13 or a material to be etched is adjusted by an angle adjusting actuator 23, and the length of the microwave guides 8 and 8' is adjusted by a length adjusting actuator 24. As a result, high-density plasma can be produced in the vicinity of the target 13 or material to be etched, and film forming or etching can be carried out at a high rate.
MUKAI YUJI
SHINTAKU HIDENOBU
TANAKA HIROYOSHI
